TIALN AND TIALCN DEPOSITION IN AN INDUSTRIAL PACVD-PLANT

Citation
D. Heim et R. Hochreiter, TIALN AND TIALCN DEPOSITION IN AN INDUSTRIAL PACVD-PLANT, Surface & coatings technology, 98(1-3), 1998, pp. 1553-1556
Citations number
7
Categorie Soggetti
Materials Science, Coatings & Films
ISSN journal
02578972
Volume
98
Issue
1-3
Year of publication
1998
Pages
1553 - 1556
Database
ISI
SICI code
0257-8972(1998)98:1-3<1553:TATDIA>2.0.ZU;2-W
Abstract
An industrial PaCVD-plant was equipped with an AlCl3-generator. By usi ng Ar, H-2, N-2, CH4, TiCl4 and AlCl3, TiAlN- and TiAlCN-films could b e deposited on hard metal and steel substrates. The plasma was generat ed by a DC-pulse power supply with frequencies up to 50 kHz. The react or size was 350 mm in diameter and 900 mm in height. During one batch 1200 indexable inserts could be coated. The growth rates were about 1- 3 mu m h(-1). The deposited films show a fine structure and Cl-concent rations below 3%. The measured critical loads were between 30 and 40 N . Wear test results show an increase in tool life up to several 100% c ompared with uncoated or TiN-coated tools. (C) 1998 Elsevier Science S .A.