INTEGRATED TEMPERATURE SENSOR IN ER-DOPED SILICON

Authors
KEWELL AK REED GT NAMAVAR F
Citation
Ak. Kewell et al., INTEGRATED TEMPERATURE SENSOR IN ER-DOPED SILICON, Sensors and actuators. A, Physical, 65(2-3), 1998, pp. 160-164
Citations number
25
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
Journal title
Sensors and actuators. A, Physical → ACNP
ISSN journal
09244247
Volume
65
Issue
2-3
Year of publication
1998
Pages
160 - 164
Database
ISI
SICI code
0924-4247(1998)65:2-3<160:ITSIES>2.0.ZU;2-8
Abstract
A temperature sensor is described which is compatible with silicon mic roelectronics and operates over the range 40-150 K. The measurement pr inciple is based on the analysis of the time decay of the luminescence emitted by erbium-doped silicon. Experimental results are given as pr oof of principle. The device could be realized using techniques from s tandard silicon electronics fabrication processes. (C) 1998 Elsevier S cience S.A.