AN INTEGRATED PYROELECTRIC INFRARED-SENSOR WITH A PZT THIN-FILM

Authors
CHANG CC TANG CS
Citation
Cc. Chang et Cs. Tang, AN INTEGRATED PYROELECTRIC INFRARED-SENSOR WITH A PZT THIN-FILM, Sensors and actuators. A, Physical, 65(2-3), 1998, pp. 171-174
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
Journal title
Sensors and actuators. A, Physical → ACNP
ISSN journal
09244247
Volume
65
Issue
2-3
Year of publication
1998
Pages
171 - 174
Database
ISI
SICI code
0924-4247(1998)65:2-3<171:AIPIWA>2.0.ZU;2-A
Abstract
In this paper integrated pyroelectric infrared sensors have been made by combining a (Pb(Zr52Ti48)O-3, PZT) thin film with an Si JFET. The J FET is used to read out the pyroelectrically generated signal. The rel evant sensor parameters, voltage sensitivity and specific detectivity, are measured within a modulation frequency range from 0.2 to 10 Hz. W ith a 500 mu m thick silicon substrate, the voltage sensitivity is R-V = 191 V W-1 and the maximum specific detectivity is D = 2x10(7) cm H z(1/2) W-1 at a modulation frequency of 1 Hz. (C) 1998 Elsevier Scienc e S.A.