VACANCIES AND SELF-INTERSTITIALS IN GERMANIUM OBSERVED BY PERTURBED-ANGULAR-CORRELATION SPECTROSCOPY

Trapping of two different point defects produced by electron irradiati on at In-111 probes is studied as a function of the Fermi level in ger manium by perturbed angular correlation spectroscopy. The defects are identified as monovacancies and self-interstitials, respectively. An a cceptor state for the vacancy at E-v + 0.20 eV and, tentatively, a don or state for the interstitial close to the conduction band (E-c - 0.04 0 eV) is deduced from the trapping behavior. Long range migration of t he neutral vacancy and the positive interstitial takes place at 200 an d 220 K, respectively.