IN-SITU INVESTIGATION OF THE SURFACE-CHEMISTRY OF ATOMIC-LAYER EPITAXIAL-GROWTH OF II-VI SEMICONDUCTOR THIN-FILMS

Atomic-layer epitaxy (ALE) can provide atomic-scale control of the sin gle-crystal growth of thin semiconducting layers. Despite the widespre ad investigation of the epitaxial properties of this technique, few de tailed studies of the fundamental surface chemistry of the process hav e been performed. This paper describes an overview of such an in situ study of heterogrowth using a binary reaction sequence with the precur sors H2S and dimethylcadmium to grow CdS on ZnSe(100). The surface che mistry was investigated using thermal desorption spectroscopy and near -edge X-ray absorption fine structure(NEXAFS). Epitaxial growth was al so characterized in the growth chamber using electron and ion surface probes.