EXCITONIC EFFECTS, LUMINESCENCE, AND LASING IN SEMICONDUCTOR MICROCAVITIES

Citation
G. Khitrova et al., EXCITONIC EFFECTS, LUMINESCENCE, AND LASING IN SEMICONDUCTOR MICROCAVITIES, Physica status solidi. b, Basic research, 206(1), 1998, pp. 3-17
Citations number
27
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
03701972
Volume
206
Issue
1
Year of publication
1998
Pages
3 - 17
Database
ISI
SICI code
0370-1972(1998)206:1<3:EELALI>2.0.ZU;2-K
Abstract
Semiconductor microcavities containing one or more narrow-linewidth qu antum wells exhibit two transmission peaks when the exciton and cavity are in resonance. It will be shown that the transmission and photolum inescence proper ties of this system are very sensitive to excitonic o ptical nonlinearities such as exciton broadening; bandgap renormalizat ion, and state filling. When the cavity mode is detuned to energies ab ove the exciton, at low densities the emission from the lower branch i s much larger than that from the upper branch. But as the density is i ncreased tile lower emission saturates and the upper emission grows ra pidly. lasing at a density less than a factor of two above crossover. It will be shown that this striking crossover is not ''boser action'' due to a condensation into tile upper branch as suggested by [1,2]. Ra ther it results from the density dependence of the transmission and ca rrier distribution functions as shown by the good agreement with a ful ly quantum mechanical microscopic theory for tile luminescence from a microcavity.