G. Khitrova et al., EXCITONIC EFFECTS, LUMINESCENCE, AND LASING IN SEMICONDUCTOR MICROCAVITIES, Physica status solidi. b, Basic research, 206(1), 1998, pp. 3-17
Semiconductor microcavities containing one or more narrow-linewidth qu
antum wells exhibit two transmission peaks when the exciton and cavity
are in resonance. It will be shown that the transmission and photolum
inescence proper ties of this system are very sensitive to excitonic o
ptical nonlinearities such as exciton broadening; bandgap renormalizat
ion, and state filling. When the cavity mode is detuned to energies ab
ove the exciton, at low densities the emission from the lower branch i
s much larger than that from the upper branch. But as the density is i
ncreased tile lower emission saturates and the upper emission grows ra
pidly. lasing at a density less than a factor of two above crossover.
It will be shown that this striking crossover is not ''boser action''
due to a condensation into tile upper branch as suggested by [1,2]. Ra
ther it results from the density dependence of the transmission and ca
rrier distribution functions as shown by the good agreement with a ful
ly quantum mechanical microscopic theory for tile luminescence from a
microcavity.