STRONG CORRELATION (T-MATRIX) EFFECTS IN ELECTRON-HOLE PLASMAS IN SEMICONDUCTORS

The influence of strong coupling effects on the carrier-carrier scatte ring and dephasing rates in bulk semiconductors is investigated. We de rive explicit expressions for the equilibrium and nonequilibrium scatt ering rates using a quantum kinetic approach in the T-matrix (full lad der) approximation. Numerical results are given: as example. for bulk GaAs in equilibrium using the T-matrix approach and, for a comparison, the Born approximation. Our results show the evidence for the influen ce of strong correlations. A reduction of the scattering rates by up t o 30% compared to the Born result and the influence of resonances on t he scattering cross sections are observed. The influence of strong cor relations is shown to increase with decreasing temperature.