COHERENTLY DRIVEN PLASMONS IN A LASER-EXCITED SEMICONDUCTOR

Citation
U. Moldzio et al., COHERENTLY DRIVEN PLASMONS IN A LASER-EXCITED SEMICONDUCTOR, Physica status solidi. b, Basic research, 206(1), 1998, pp. 265-272
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
03701972
Volume
206
Issue
1
Year of publication
1998
Pages
265 - 272
Database
ISI
SICI code
0370-1972(1998)206:1<265:CDPIAL>2.0.ZU;2-E
Abstract
We present a numerical study of the two-band semiconductor Bloch equat ions in bulk GaAs under the influence of a short laser pulse. In our m icroscopic approach, based on the nun-equilibrium Greens function (GF) formalism, we show that within the random-phase approximation with a dynamically screened potential the coherent carrier dynamics is strong ly modified by a coupling of optical plasmons and interband polarisati on.