DAMPING AND T-MATRIX IN DENSE E-H PLASMAS

An incoherent approach to the physical mechanisms giving rise to the M ott transition and gain in III-V and II-VI semiconductor media is pres ented. Dynamical screening and one-particle Green's functions (GF) are handled within a full RPA scheme. The resulting one-particle GF serve as input for a T-matrix calculation in screened ladder approximation taking into account bound and scattering states on an equal footing. T he T-matrix is used to improve the one-particle GF as well as the tran sverse polarization function.