GAIN SPECTRA OF AN (INGA)AS SINGLE-QUANTUM-WELL LASER-DIODE

A new method using the broad spectrum of a 10 fs Ti:sapphire laser is demonstrated for measuring the gain spectra of semiconductor lasers wi th high and quantitative accuracy. Results are shown for an edge-emitt ing ridge-waveguide In0.05Ga0.95As single quantum well (SQW) laser. Th e device is studied from tile absorption regime up to the strong gain regime recording both, TE and TM polarizations. The experiments are co mpared to the predictions of a microscopic model based on the semicond uctor Bloch equations including microscopic scattering and dephasing t erms. A very good quantitative agreement is obtained.