EMISSION AND LASING OF A SEMICONDUCTOR WITHIN RECTANGULAR WAVE-GUIDE GEOMETRY

Emission spectra of a semiconductor stationarily excited and embedded in a rectangular waveguide are presented. A recently developed quantum kinetic description is used to obtain exact relations between the out put power and optical functions of the semiconductor. The latter ones are provided by solving the semiconductor Bloch equations (SBE) on an advanced level, i.e. considering dynamical screening and both carrier- carrier and carrier-polarization scattering. Gain and related output s pectra for various excitation intensities are presented and compared w ith different approximations used in the literature. The strong influe nce of the transverse mode propagation on the laser output iu demonstr ated.