ELECTRON-BEAM ACTIVATION OF ACCEPTORS IN MOVPE ZNSE-N

Citation
Vi. Kozlovsky et al., ELECTRON-BEAM ACTIVATION OF ACCEPTORS IN MOVPE ZNSE-N, Journal of crystal growth, 185, 1998, pp. 435-439
Citations number
11
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
185
Year of publication
1998
Pages
435 - 439
Database
ISI
SICI code
0022-0248(1998)185:<435:EAOAIM>2.0.ZU;2-5
Abstract
The influence of low-temperature (40 K) e-beam irradiation on the cath odoluminescence (CL) spectrum reconstruction of MOVPE ZnSe : N epilaye rs was studied. The maximum of the initial wide emission band shifted from 466 to 459 nm and the LO phonon structure appeared at a total exp osure dose greater than 10(18) cm(-2). Neither HE lamp nor N-2 laser i rradiation produced any spectral change. The observed reconstruction w as attributed to an acceptor activation by a destruction of N-H comple xes followed by a removal of free H atoms from the epilayer. This was initiated by ionization processes under the e-beam irradiation. (C) 19 98 Elsevier Science B.V. All rights reserved.