VAPOR-PHASE AND LIQUID-PHASE DOPING OF ZNSE BY GROUP-III ELEMENTS

Authors
GEORGOBIANI AN AMINOV UA KOROSTELIN YV KOZLOVSKY VI NASIBOV AS SHAPKIN PV
Citation
An. Georgobiani et al., VAPOR-PHASE AND LIQUID-PHASE DOPING OF ZNSE BY GROUP-III ELEMENTS, Journal of crystal growth, 185, 1998, pp. 470-474
Citations number
6
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
185
Year of publication
1998
Pages
470 - 474
Database
ISI
SICI code
0022-0248(1998)185:<470:VALDOZ>2.0.ZU;2-4
Abstract
A vapour phase doping of ZnSe single crystals by In impurity during a growth process at T = 1180 degrees C was developed. A liquid phase dop ing was performed by means of annealing of crystal wafers in liquid Zn with an addition of In or Al at T = 900 degrees C. Atomic-emission an alysis, cathodoluminescence study, specific resistance and Hall measur ements were carried out. The concentration of the In and Al impurities in ZnSe single crystals were in a range from 10(17) to 10(19) cm(-3) High n-type conductivity in the ZnSe single crystals doped by In or Al impurities was achieved: the specific resistance was as low as 0.05 O mega cm for the Al liquid phase doping and about 1 Omega cm for the In vapour phase doping followed by annealing in the liquid Zn:In. (C) 19 98 Elsevier Science B.V. All rights reserved.