MBE GROWTH OF MONOLITHIC MGZNSSE ZNSSE/CDZNSE MICROCAVITY LED STRUCTURES/

Authors
UUSIMAA P RINTAMOYKKY A ORSILA S SALOKATVE A PESSA M
Citation
P. Uusimaa et al., MBE GROWTH OF MONOLITHIC MGZNSSE ZNSSE/CDZNSE MICROCAVITY LED STRUCTURES/, Journal of crystal growth, 185, 1998, pp. 783-786
Citations number
5
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
185
Year of publication
1998
Pages
783 - 786
Database
ISI
SICI code
0022-0248(1998)185:<783:MGOMMZ>2.0.ZU;2-W
Abstract
The molecular beam epitaxy growth of green, monolithic, microcavity li ght-emitting diode structures is presented. The uniformity and control lability of the growth of vertical cavity structures is found to impro ve by using in situ reflectivity measurements and a rotating substrate . An electrical injection study for a microcavity light-emitting diode shows a narrow spectral width of 6 nm from a device at resonance. (C) 1998 Elsevier Science B.V. All rights reserved.