Js. Lewis et al., PHOTOLUMINESCENCE AND THERMAL QUENCHING OF BOUND EXCITONS IN (BAS)(1-X)(SRTE)(X), Journal of crystal growth, 185, 1998, pp. 1175-1179
Photoluminescence spectra are reported for the first time for (BaS)(1-
x)(SrTe)(x)(x = 0.1, 1.0, and 5.0 wt%) powders. Changes in the lumines
cent spectra were attributed to bound exciton recombination at substit
uted Te on S (Te-S) sites. Peaks were observed at 420 and 465 nm, and
were attributed to singlet and doublet Te emission, respectively. The
binding energies and thermal quenching activation energies for the sin
glet and doublet excitons were found to be 630 and 860 meV, and 45 and
58 meV, respectively. The thermal quenching activation energy for sin
glet excitons was attributed to the energy required to excite the boun
d electron into the conduction band of the BaS host, and for doublet e
xcitons was attributed to charge transfer between Te-S and/or nonradia
tive quenching centers. (C) 1998 Elsevier Science B.V. All rights rese
rved.