POLYCARBAZOLE-BASED ELECTROCHEMICAL TRANSISTOR

Citation
V. Rani et Ksv. Santhanam, POLYCARBAZOLE-BASED ELECTROCHEMICAL TRANSISTOR, JOURNAL OF SOLID STATE ELECTROCHEMISTRY, 2(2), 1998, pp. 99-101
Citations number
16
Categorie Soggetti
Electrochemistry
ISSN journal
14328488
Volume
2
Issue
2
Year of publication
1998
Pages
99 - 101
Database
ISI
SICI code
1432-8488(1998)2:2<99:PET>2.0.ZU;2-S
Abstract
A polycarbazole conducting polymer transistor has been constructed hav ing the dimensions 1 cm x 2 cm x 1 mm. Polycarbazole film used here ha s a redox potential of 1.30 V. Polymer-coated platinum plates were use d as the source and drain. The inter-electrode spacing of the device i s typically of the order of 200-500 mu m to minimise the internal resi stance. The high saturation current region of the transistor in the mo st positive bias voltage (1.3 V), with negligible hysteresis and great er stability, appears to give a device that is superior to other condu cting polymer transistors.