A polycarbazole conducting polymer transistor has been constructed hav
ing the dimensions 1 cm x 2 cm x 1 mm. Polycarbazole film used here ha
s a redox potential of 1.30 V. Polymer-coated platinum plates were use
d as the source and drain. The inter-electrode spacing of the device i
s typically of the order of 200-500 mu m to minimise the internal resi
stance. The high saturation current region of the transistor in the mo
st positive bias voltage (1.3 V), with negligible hysteresis and great
er stability, appears to give a device that is superior to other condu
cting polymer transistors.