LOW-TEMPERATURE POLYSILICON RESHAPES FPD PRODUCTION

Citation
Jg. Blake et al., LOW-TEMPERATURE POLYSILICON RESHAPES FPD PRODUCTION, Solid state technology, 40(5), 1997, pp. 151
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
0038111X
Volume
40
Issue
5
Year of publication
1997
Database
ISI
SICI code
0038-111X(1997)40:5<151:LPRFP>2.0.ZU;2-C
Abstract
Many liquid crystal display (LCD) manufacturers are directing consider able effort toward the development of low-temperature polysilicon (LTP S) technology, because it promises to produce higher-performance displ ays at lower cost. The success of LTPS depends on new device structure s, new processes, and process equipment designed specifically for this technology. This article addresses critical processes that will requi re development.