LOW-THRESHOLD ROOM-TEMPERATURE CW OPERATION OF ZNSE-BASED BLUE GREEN LASER-DIODES GROWN ON CONDUCTIVE ZNSE SUBSTRATES/

Authors
NAKANISHI F DOI H OKUDA N MATSUOKA T KATAYAMA K SAEGUSA A MATSUBARA H YAMADA T UEMURA T IRIKURA M NISHINE S
Citation
F. Nakanishi et al., LOW-THRESHOLD ROOM-TEMPERATURE CW OPERATION OF ZNSE-BASED BLUE GREEN LASER-DIODES GROWN ON CONDUCTIVE ZNSE SUBSTRATES/, Electronics Letters, 34(5), 1998, pp. 496-497
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
5
Year of publication
1998
Pages
496 - 497
Database
ISI
SICI code
0013-5194(1998)34:5<496:LRCOOZ>2.0.ZU;2-L
Abstract
SCH laser structures of ZnCdSe/ZnSe/ZnMgSSe have been grown on conduct ive ZnSe substrates by molecular beam epitaxy. Continuous-wave laser o peration at room temperature was observed at a wavelength of 527.9nm ( 2.349eV). The threshold current and threshold voltage were 44mA (222A/ cm(2)) and 5.4V, respectively. A lifetime of 74s at a constant light o utput power of 2mW was obtained.