TRANSIMPEDANCE AMPLIFIERS BASED ON SI SIGE MODFETS/

Authors
SAXARRA M GLUCK M ALBERS JN BEHAMMER D LANGMANN U KONIG U
Citation
M. Saxarra et al., TRANSIMPEDANCE AMPLIFIERS BASED ON SI SIGE MODFETS/, Electronics Letters, 34(5), 1998, pp. 499-500
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
5
Year of publication
1998
Pages
499 - 500
Database
ISI
SICI code
0013-5194(1998)34:5<499:TABOSS>2.0.ZU;2-5
Abstract
For the first time, two-stage transimpedance amplifiers using n-type S i/SiGe-MODFETs have been fabricated in order to check the potential of this novel device generation for analogue designs. S-parameter measur ements showed -3dB Omega bandwidths of 1.8GHz with a transimpedance ga in of 56dB Omega. Circuits with lower bandwidths reached values for tr ansimpedances of up to 72dB Omega.