LOW-V-PI ELECTROOPTIC MODULATOR WITH A HIGH-MU-BETA CHROMOPHORE AND ACONSTANT-BIAS FIELD

Citation
A. Chen et al., LOW-V-PI ELECTROOPTIC MODULATOR WITH A HIGH-MU-BETA CHROMOPHORE AND ACONSTANT-BIAS FIELD, Optics letters, 23(6), 1998, pp. 478-480
Citations number
14
Categorie Soggetti
Optics
Journal title
ISSN journal
01469592
Volume
23
Issue
6
Year of publication
1998
Pages
478 - 480
Database
ISI
SICI code
0146-9592(1998)23:6<478:LEMWAH>2.0.ZU;2-Z
Abstract
A low half-wave voltage V-pi of 1.57 V was obtained with a 2-cm-long b irefringent polymer waveguide modulator at a wavelength of 1.3 mu m by use of a modulator design with a constant-bias electric field and a h igh-mu beta chromophore. The design allows the maximum achievable elec tro-optic coefficient of the material to be utilized. This electro-opt ic coefficient can be more than twice as high as the residue value tha t is used by conventional modulator designs, after fast partial relaxa tion following poling. (C) 1998 Optical Society of America.