THE THICKNESS OF THE SUBCONTACT MODIFIED LAYER OF LASER-ANNEALED WINGE CONTACTS TO GAAS

It is the purpose of this work to provide a description of determining a thickness of a modified subcontact GaAs layer for WInGe contacts an nealed by radiation from power YAG : Nd laser (wavelength 1060 nm). A direct method is based on selective etching of fracture surfaces under the contact and on using an electron microscope. An indirect method i s based on formation of contacts on undoped semiconductor layers with various thicknesses. The thickness of the modified subcontact layer at the optimum annealed energy density of 0.09 J cm(-2) attains value of 500 nm.