F. Goesmann et al., METALLIZATION STUDIES ON TI3SIC2-BASED CONTACTS ON 6H-SIC, Journal of materials science. Materials in electronics, 9(2), 1998, pp. 103-107
In this study, three different metals (Au, Al, and Pd) were investigat
ed as possible metallization layers on top of titanium based electrica
l contacts on 6H-SiC. Experiments involved thermal stressing of contac
t structures and its effect on electrical and morphological contact pr
operties. Gold proved to be stable up to 300 degrees C with good elect
rical properties. At 600 degrees C the films disintegrate within a mat
ter of hours. Aluminium films are stable at 600 degrees C but the elec
trical contact resistance increases with annealing time. Palladium fil
ms are electrically and chemically stable at 600 degrees C. (C) 1998 C
hapman & Hall.