METALLIZATION STUDIES ON TI3SIC2-BASED CONTACTS ON 6H-SIC

Citation
F. Goesmann et al., METALLIZATION STUDIES ON TI3SIC2-BASED CONTACTS ON 6H-SIC, Journal of materials science. Materials in electronics, 9(2), 1998, pp. 103-107
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
09574522
Volume
9
Issue
2
Year of publication
1998
Pages
103 - 107
Database
ISI
SICI code
0957-4522(1998)9:2<103:MSOTCO>2.0.ZU;2-G
Abstract
In this study, three different metals (Au, Al, and Pd) were investigat ed as possible metallization layers on top of titanium based electrica l contacts on 6H-SiC. Experiments involved thermal stressing of contac t structures and its effect on electrical and morphological contact pr operties. Gold proved to be stable up to 300 degrees C with good elect rical properties. At 600 degrees C the films disintegrate within a mat ter of hours. Aluminium films are stable at 600 degrees C but the elec trical contact resistance increases with annealing time. Palladium fil ms are electrically and chemically stable at 600 degrees C. (C) 1998 C hapman & Hall.