THERMAL ETCHING OF GAAS(113) SURFACES

We discuss scanning electron micrographs and atomic force microscope i mages of thermally etched GaAs(1 1 3) surfaces. The GaAs(1 1 3) A and GaAs(<1 1 (3)over bar>)B surfaces are compared. The polarity of the su rface leads to a different morphology for the two surfaces after therm al etching. It is found that the Ga-enriched droplets, which form unde r As-deficient conditions at higher temperatures, are sitting on chara cteristic pedestals, which are different for the two faces. The facets occurring after this thermal etching process are identified. They rep resent thermally favourable surfaces under the arsenic-deficient condi tions of the thermal etching process. (C) 1998 Chapman & Hall.