Mr. Vogt et al., IN-SITU STM STUDY OF THE INITIAL-STAGES OF CORROSION OF CU(100) ELECTRODES IN SULFURIC AND HYDROCHLORIC-ACID SOLUTION, Surface science, 399(1), 1998, pp. 49-69
An in-situ scanning tunneling microscopy (STM) study of Cu(100) electr
ode surfaces in sulfuric and hydrochloric acid solutions in the potent
ial range -0.6 to -0.1 V versus Ag/AgCl (KClsat) is presented, reveali
ng the surface structure and dynamics in the double-layer region and p
roviding detailed structural data on the initial stages of anodic Cu d
issolution. After preparation by electropolishing in phosphoric acid,
large, atomically flat terraces, separated by frizzy, almost randomly
oriented steps are observed in H2SO4 solution in the double-layer regi
on. Atomic-stale observations reveal a (1x1) surface lattice in the en
tire potential range, even during Cu dissolution. In HCl solution this
surface morphology and atomic structure are visible only at potential
s negative of -0.4 V, whereas above -0.4 V a c(2x2) Cl adlattice is ob
served, together with strong faceting of the steps along the [010] and
[001] directions. At low etch rates, the dissolution of clean Cu surf
aces proceeds solely by step-flow etching in both electrolytes. In H2S
O4 solution the dissolution process is accompanied by strong fluctuati
ons in the step positions and by an increase in step roughness. Zn HCl
solution the [010]- and [001]-oriented steps are stabilized by the c(
2x2) Cl adlayer and Cu dissolution proceeds by the subsequent removal
of complete atomic rows consisting of primitive (root 2x root 2)R45 de
grees units of the (2x2) adlattice along these steps. A mechanism is p
roposed where the dissolution of Cu atoms occurs at two slightly diffe
rent, structurally well-defined kink sites in the c(2x2) lattice, whic
h rapidly travel along the step edge (i.e. along [010] or [001]) durin
g the dissolution process. Adsorbed impurities can locally pin Cu terr
aces, resulting in the formation of highly anisotropic islands, penins
ulas and troughs, or induce the formation of monoatomic etch pits. (C)
1998 Elsevier Science B.V.