THE EFFECT OF ADDITIONAL ION PLASMA ASSISTANCE IN CNX-FILM DEPOSITIONBASED ON A FILTERED CATHODIC ARC/

Citation
M. Kuhn et al., THE EFFECT OF ADDITIONAL ION PLASMA ASSISTANCE IN CNX-FILM DEPOSITIONBASED ON A FILTERED CATHODIC ARC/, Thin solid films, 311(1-2), 1997, pp. 151-156
Citations number
13
Journal title
ISSN journal
00406090
Volume
311
Issue
1-2
Year of publication
1997
Pages
151 - 156
Database
ISI
SICI code
0040-6090(1997)311:1-2<151:TEOAIP>2.0.ZU;2-B
Abstract
The crucial parameters in CNx-film deposition are the nature of carbon and nitrogen species and their kinetic energy. The filtered cathodic are produces a highly ionised carbon plasma, containing mainly C+ ions . In a standard reactive process, deposition is performed in a reactiv e gas atmosphere, and there is only little control of the degree of io nisation and kinetic energy of the gas species. Therefore, three types of ion or plasma sources have been used for additional nitrogen bomba rdment during the deposition of CNx-films: a two-grid Kaufman ion sour ce, a gridless Kaufman source and a hollow anode plasma source. Charac terisation of the different types of nitrogen plasma or ion beams was carried out by means of energy resolved mass spectroscopy and electric probe measurements. The films have been analysed for their chemical c omposition, microstructure and mechanical properties. High energy ion bombardment from the two-grid Kaufman ion source yields films with rel atively high nitrogen content (up to 30 at.%) but rather poor mechanic al properties. Using the nitrogen beams from the two other sources CNx -films with lower N-content but enhanced mechanical properties have be en found. (C) 1997 Elsevier Science S.A.