ORIENTED PBZRXTI1-XO3 THIN-FILMS OBTAINED AT LOW SUBSTRATE-TEMPERATURE BY PULSED-LASER DEPOSITION

One step deposition of oriented thin films of PbZrxTi1-xO3 onto (100)- and (111)-Si substrates by pulsed laser ablation at low substrate tem peratures (375 degrees C) is reported. X-ray diffraction analysis show ed that the films grew with preferential (111) orientation on both sub strates but energy dispersive spectroscopy revealed different composit ions despite identical targets and substrate temperatures. Direct piez oelectric measurements showed good piezoelectric properties of the fil ms, obtained in the absence of any subsequent poling. (C) 1997 Elsevie r Science S.A.