PHOTOVOLTAGE PROPERTIES OF SEMICONDUCTOR LB FILMS ON N-SI SUBSTRATE IN CONTACT WITH METAL-ELECTRODE

Photovoltage properties of multilayer Langmuir-Blodgett (LB) films of corbathiene (similar to 100 nm thick) on the n-Si substrate with semit ransparent top gold electrode have been investigated. Measurements of photovoltage dependence on wavelength and intensity of exciting light have been performed. The photovoltage values attaining 0.4 V are well reproducible when subjected to illumination of intensity up to 10(14) photons cm(-2) s(-1) in the wavelength range 300-900 nm. The results a re related to the major role of the film/substrate interface and to th e films optical absorption features. (C) 1997 Elsevier Science S.A.