MODULATION INSTABILITY OF ELECTROMAGNETIC-RADIATION IN NARROW-GAP SEMICONDUCTORS

The modulation instability of electromagnetic radiation propagating in narrow-gap semiconductor plasma is considered. In a dense n-doped InS b semiconductor plasma the instability can develop in a picosecond tim e scale for the field intensities E approximate to 1.6x10(5) V/cm. The numerical simulations confirm the analytical predictions that a modul ated localized long pulse splits into a chain of solitonlike structure s. Possible applications of this effect to generate short picosecond p ulses and the dynamical light grating of the semiconductor at midinfra red wavelengths are suggested.