AU H-SI(111)-(1X1) INTERFACE VERSUS AU/SI(111)-(7X7)/

The room-temperature growth of gold on Si(111) surfaces has been direc tly compared for nonreconstructed hydro en-terminated surfaces and the bare 7x7-reconstructed surface by means of high-resolution core-level and valence-band photoelectron spectroscopy and Auger spectroscopy. T he growth modes show strong differences with gold island formation on the passivated H:Si(111)-(1x1) surface. Silicon segregated on top of t he deposited gold film is seen for both interfaces. The Schottky barri er is only weakly affected by the hydrogen termination.