MAGNETOLUMINESCENCE STUDY OF A 2-DIMENSIONAL ELECTRON-GAS CONFINED INDILUTED-MAGNETIC-SEMICONDUCTOR QUANTUM-WELLS

We have carried out a photoluminescence study of an n-type modulation- doped ZnSe/Zn0.825Cd0.14Mn0.035Se/ZnSe single quantum well structure ( electron areal density n(A)=1.6x10(12) cm(-2)) in magnetic fields up t o 30 T. In the presence of a magnetic field, the broad emission band i n the vicinity of the gap evolves into a series of discrete features. These are attributed to interband transitions of electrons occupying L andau levels to photogenerated holes. The Landau transitions associate d with both electron spin states (m(j)=+/-1/2) are clearly resolved du e to the targe electron and hole g factors exhibited by the magnetic w ells. An analysis of the Landau-level occupation as a function of magn etic field yields the electron concentration.