BLUE-GREEN MICROCAVITY LIGHT-EMITTING DIODE WITH MONOLITHIC MGZNSSE ZNSSE BRAGG REFLECTORS/

Optical properties of the first fully monolithic molecular beam epitax y (MBE) grown II-VI microcavity light emitting diode (MCLED) structure emitting at 502 nm are studied. A CdZnSe quantum well is placed in a ZnSSe lambda-cavity between MgZnSSe/ZnSSe distributed Bragg reflectors (DBR). The 20.5 period n-type bottom and 4 period p-type top mirrors are designed to have reflectivities of approximate to 90 and 47%, resp ectively. Room temperature photoluminescence (PL) measurements for the surface emitting MCLED structure show a clear increase in emission in tensity and a remarkably narrow spectral width of 5 nm at the cavity r esonance. Initial electrical injection tests show a very narrow spectr al width of 6 nm from a MCLED emitting at 503 nm. (C) 1998 Elsevier Sc ience S.A. All rights reserved.