MULTIWAFER MOVPE TECHNOLOGY FOR LOW-DIMENSIONAL GA-AL-IN-N STRUCTURES

State-of-the-art GaN devices more and more make use of low-dimensional effects. Both light emitting diodes (LEDs) and laser diodes consist o f quantum wells in their active regions. This requires an extremely pr ecise control of layer thickness and uniformity of alloy composition d uring MOVPE growth. For mass production of these structures the requir ements are even tougher. Wafer uniformity within one run and reproduci bility from run to run are most critical issues here. In this paper we present a class of multiwafer MOVPE-reactors which have proven to pro duce high quality GaN based material. We will also present data on bul k layer uniformity as well as the excellent interface sharpness of qua ntum well structures. (C) 1998 Elsevier Science S.A. All rights reserv ed.