PERFORMANCE AND DESIGN OF VERTICAL, BALLISTIC, HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS

Authors
WERNERSSON LE LITWIN A SAMUELSON L XU HQ
Citation
Le. Wernersson et al., PERFORMANCE AND DESIGN OF VERTICAL, BALLISTIC, HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 76-80
Citations number
9
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
51
Issue
1-3
Year of publication
1998
Pages
76 - 80
Database
ISI
SICI code
0921-5107(1998)51:1-3<76:PADOVB>2.0.ZU;2-H
Abstract
The influence of ballistic transport and the doping level on the pinch -off voltage in an AlGaAs/GaAs heterostructure permeable base transist or is studied by numerical simulation. It is established that the high velocity of the injected hot electrons prevents a charge build-up in the vertical channel. Therefore, the dependence of the doping on the t ransconductance is reduced and the doping may, independently, be alter ed to adjust the pinch-off voltage. These devices are predicted to hav e an f(t) above 300 GHz. (C) 1998 Elsevier Science S.A. All rights res erved.