TEMPERATURE EFFECTS IN SEMICONDUCTOR QUANTUM-DOT LASERS

Self-assembled quantum dots (QDs) of highly strained InAlAs have been grown by molecular beam epitaxy (MBE) in separate confinement p-i-n he terostructres on (001) GaAs substrates. At low temperatures, the lasin g threshold currents for red-emitting QD lasers are found to be more t emperature-independent than for quantum well (QW) lasers. At higher te mperatures, the temperature dependence of the threshold currents is go verned mainly by the depth of the separate confinement region which wa s designed to obtain QD lasers capable of room temperature emission wi th simple broad area laser devices having external efficiencies of sim ilar to 13% at low temperatures. Crown copyright (C) 1998 Published by Elsevier Science S.A. All rights reserved.