Ji. Lee et al., TIME-RESOLVED SPECTROSCOPY OF INAS QUANTUM DOTS USING ONE-SIDE MODULATION-DOPING TECHNIQUE - RENORMALIZATION AND SCREENING, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 122-126
We present the optical properties of modulation-doped InAs/GaAs quantu
m dots (QDs). Bandgap renormalization is clearly observed from a red s
hift of the emission peaks on the QDs with various modulation-doping c
oncentrations, demonstrating that exchange interactions of electrons w
ithin single states have no effect on renormalization. Screening due t
o the electrons at modulation-doped layer as well as the photo-generat
ed carriers in GaAs matrix plays an important role in reducing the rad
iative recombination rate. (C) 1998 Elsevier Science S.A. All rights r
eserved.