A NEW APPROACH TO ZNCDSE QUANTUM DOTS

We propose a new approach of fabricating ZnCdSe quantum dots (QDs) on ZnSe and GaAs (110) surfaces by simply depositing a ZnSe/ZnCdSe/ZnSe h eterostructure. The growth conditions are selected to introduce surfac e roughness on the over grown ZnSe which allows the formation of ZnCdS e QDs. Optical studies unambiguously demonstrate the formation of QDs. Resolution-limited sharp emission lines are observed by micro-photolu minescences and the linewidths are much less than the thermal energy. As time goes on, intermittent behaviors of the QD emissions are observ ed. A proper selection of growth conditions is essential in obtaining ZnCdSe QDs by this method, especially on GaAs (110) surfaces. (C) 1998 Elsevier Science S.A. All rights reserved.