FABRICATION AND CHARACTERIZATION OF ULTRA SHARP SILICON FIELD EMITTERS

Ultra sharp single crystal [100] silicon emitters have been fabricated in gated configuration using a combination of high resolution electro n beam lithography and plasma dry etching. High and stable emission cu rrents have been obtained from individual and multi-tip arrays. Critic al requirements of the microfabrication technique include etching of t he silicon dioxide mask with near vertical walls and a high degree of control over the isotropic etching of the silicon to produce precise u ndercut profiles. (C) 1998 Elsevier Science S.A. All rights reserved.