SELECTIVE EPITAXIAL-GROWTH OF STRAINED SIGE SI FOR OPTOELECTRONIC DEVICES/

Two aspects of the selective epitaxial growth of Si and Si1-xGex will be discussed. First the facet formation as dependent on the oxide wall orientation and the lateral size of oxide openings. Besides the often cited {111}, {113} and {110} planes additional planes were observed, the {119} and the {0 1 12} planes. Second, the reduction of misfit dis location density by reducing the area of the pads allows strained Si1- xGex layers to grow much thicker than the critical thickness. As an ap plication for the latter the electroluminescence of forward biased PIN diodes with strained Si0.80Ge0.20/Si(001) will be discussed as being dependent on the thickness of the SiGe layer. It was found that in thi cker strained samples the band edge electroluminescence persists up to room temperature. Quantitative modelling of the electroluminescence c ould explain the temperature and SiGe thickness dependence of the elec troluminescence. (C) 1998 Elsevier Science S.A. All rights reserved.