SELF-ASSEMBLED, VERY LONG II-VI SEMICONDUCTOR QUANTUM WIRES

Authors
ZHANG BP WANG WX YASUDA T SEGAWA Y YAGUCHI H ONABE K EDAMATSU K ITOH T
Citation
Bp. Zhang et al., SELF-ASSEMBLED, VERY LONG II-VI SEMICONDUCTOR QUANTUM WIRES, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 224-228
Citations number
16
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
51
Issue
1-3
Year of publication
1998
Pages
224 - 228
Database
ISI
SICI code
0921-5107(1998)51:1-3<224:SVLISQ>2.0.ZU;2-P
Abstract
Self-organized ZnCdSe quantum wires (QWRs) are realized on cleavage-in duced GaAs (110) surfaces based on simultaneous selective growth and c omposition modulation. Formed on step tops, the QWRs are parallel to t he [<(1)over bar 10>] direction and extend to millimeter order in leng th. Surface observations and optical studies demonstrate the formation of QWRs. A large piezo-electric field is observed in the QWRs, implyi ng potential applications in nonlinear optoelectronic devices. (C) 199 8 Elsevier Science S.A. All rights reserved.