EFFECTS OF GROWTH INTERRUPTION ON UNIFORMITY OF GAAS QUANTUM WIRES FORMED ON VICINAL GAAS(110) SURFACES BY MBE

Authors
NAKASHIMA H KATO T MAEHASHI K NISHIDA T INOUE Y TAKEUCHI T INOUE K FISCHER P CHRISTEN J GRUNDMANN M BIMBERG D
Citation
H. Nakashima et al., EFFECTS OF GROWTH INTERRUPTION ON UNIFORMITY OF GAAS QUANTUM WIRES FORMED ON VICINAL GAAS(110) SURFACES BY MBE, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 229-232
Citations number
7
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
51
Issue
1-3
Year of publication
1998
Pages
229 - 232
Database
ISI
SICI code
0921-5107(1998)51:1-3<229:EOGIOU>2.0.ZU;2-F
Abstract
GaAs quantum wires are naturally formed by MBE on vicinal GaAs(110) su rfaces with coherently aligned giant growth steps due to thickness mod ulation at step edges. Two-step growth with growth interruption is emp loyed to improve uniformity and confinement energies of quantum wires, which are confirmed by photo and cathodoluminescence measurements. (C ) 1998 Elsevier Science S.A. All rights reserved.