HYDRIDE VAPOR-PHASE EPITAXY FOR NANOSTRUCTURES

Authors
MESSMER ER LOURDUDOSS S AHOPELTO J LIPSANEN H HIEKE K WESSTROM JO REITHMAIER JP KERKEL K FORCHEL A SEIFERT W CARLSSON N SAMUELSON L
Citation
Er. Messmer et al., HYDRIDE VAPOR-PHASE EPITAXY FOR NANOSTRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 238-241
Citations number
6
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
51
Issue
1-3
Year of publication
1998
Pages
238 - 241
Database
ISI
SICI code
0921-5107(1998)51:1-3<238:HVEFN>2.0.ZU;2-5
Abstract
The flexibility of hydride vapour phase epitaxy (HVPE) for fabricating nanostructures is demonstrated by exemplifying three cases: (1) impro vement of optical characteristics of wet etched wires after overgrowth , (2) improvement of electrical characteristics of reactive ion etched wires after regrowth and (3) fabrication of InP templates on GaAs sub strate written previously with focused ion beam (FIB). (C) 1998 Elsevi er Science S.A. All rights reserved.