IMPROVED POROUS MIXTURE OF MOLYBDENUM NITRIDE AND TANTALUM OXIDE AS ACHARGE STORAGE MATERIAL

Authors
DENG CZ PYNENBURG RAJ TSAI KC
Citation
Cz. Deng et al., IMPROVED POROUS MIXTURE OF MOLYBDENUM NITRIDE AND TANTALUM OXIDE AS ACHARGE STORAGE MATERIAL, Journal of the Electrochemical Society, 145(4), 1998, pp. 61-63
Citations number
8
Categorie Soggetti
Electrochemistry,"Materials Science, Coatings & Films
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
145
Issue
4
Year of publication
1998
Pages
61 - 63
Database
ISI
SICI code
0013-4651(1998)145:4<61:IPMOMN>2.0.ZU;2-W
Abstract
High surface area gamma-molybdenum nitride has shown promise as a char ge storage material. The addition of amorphous tantalum oxide to the m olybdenum nitride system not only improves the film cohesion tremendou sly, but also widens the voltage stability window from 0.8 to 1.1 V. T his occurs without adversely effecting the capacitance.