L. Chen et al., THE SEARCH FOR CATHODE AND ANODE TRAPS IN HIGH-VOLTAGE STRESSED SILICON-OXIDES, Journal of the Electrochemical Society, 145(4), 1998, pp. 1292-1296
Citations number
24
Categorie Soggetti
Electrochemistry,"Materials Science, Coatings & Films
When silicon oxide is stressed at high voltages, traps are generated i
nside the oxide and at the oxide's interfaces. The traps are negativel
y charged near the cathode and positively charged near the anode. The
charge state of the traps can be easily changed by application of low
voltages. Several models of trap generation have been proposed. These
models involve either electron impact ionization processes or high fie
ld generation processes. We have attempted to determine the relative t
rap locations inside the oxides for oxides between 5 and 80 nm thick,
in order determine which processes are most likely. No evidence for a
higher density of traps near the anode in any of these oxides was foun
d, casting doubt on the efficiency of the impact ionization process in
trap generation, even in thicker oxides. These data would support a t
rap generation model controlled by the high fields inside the oxides.