THIN-FILMS OF AMORPHOUS GERMANIUM-TIN ALLOYS PREPARED BY RADIOFREQUENCY MAGNETRON SPUTTERING

Authors
MARUYAMA T AKAGI H
Citation
T. Maruyama et H. Akagi, THIN-FILMS OF AMORPHOUS GERMANIUM-TIN ALLOYS PREPARED BY RADIOFREQUENCY MAGNETRON SPUTTERING, Journal of the Electrochemical Society, 145(4), 1998, pp. 1303-1305
Citations number
8
Categorie Soggetti
Electrochemistry,"Materials Science, Coatings & Films
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
145
Issue
4
Year of publication
1998
Pages
1303 - 1305
Database
ISI
SICI code
0013-4651(1998)145:4<1303:TOAGAP>2.0.ZU;2-2
Abstract
Thin films of amorphous germanium-tin alloy (a-Ge1-xSnx) have been pre pared by sputtering germanium and tin targets with argon in a radio-fr equency magnetron sputtering system. X-ray diffraction reveals that th e film for x < 0.38 is amorphous but that crystalline beta-Sn is forme d in the amorphous film for x greater than or equal to 0.38. The optic al energy gap is expressed by Eg = 0.68 - 0.85x [eV] for x < 0.38. The equation also correlates the pseudo-optical energy gap for the GeSn-b eta-Sn composite film.