LOW-TEMPERATURE SILICON WAFER-TO-WAFER BONDING WITH NICKEL SILICIDE

A new low temperature silicon wafter-to-wafer bonding with nickel sili cide at an annealing temperature of 440 degrees C is presented. Good a dhesion between the wafers has been achieved as measured by tensile st rength testing, and observed by scanning electron microscopy. The bond ing area percentage, measured by ultrasonic testing, is larger than 90 %. The nickel silicide formed at the interface is NiSi, as observed by X-ray diffraction and Auger electron spectroscopy. The bonded pairs s how good contact characteristics.