STRAINED-LAYER INGAAS-GAAS-INGAP BURIED-HETEROSTRUCTURE QUANTUM-WELL LASERS ON A LOW-COMPOSITION INGAAS SUBSTRATE BY SELECTIVE-AREA MOCVD

Aluminum-free buried-heterostructure quantum-well lasers have been suc cessfully fabricated on low-composition InGaAs:n substrates. Selective -area metalorganic chemical vapor deposition (MOCVD) was utilized to i nvestigate a variety of InGaAs quantum wells with a wide range of comp osition and thickness. Compressively strained quantum wells can be dep osited thicker on substrates of InGaAs than GaAs before the generation of misfit dislocations. These deeper potential wells enable laser dio des with longer wavelengths (1.1504 mu m) than GaAs-based emitters and higher characteristic temperatures (145 K) than InP-based devices.