1.3-MU-M ALGAINAS-ALGAINAS STRAINED MULTIPLE-QUANTUM-WELL LASERS WITHA P-ALINAS ELECTRON STOPPER LAYER

1.3-mu m AlGaInAs-AlGaInAs strained multiple-quantum-well (MQW) lasers with a p-AlInAs electron stopper layer have been fabricated. The elec tron stopper layer was inserted between the MQW and p-side separate co nfinement heterostructure (SCH) layers to suppress the electron overfl ow from the MQW to p-SCH. The characteristic temperatures of the thres hold currents and slope efficiencies were improved in the lasers with the stopper layers, especially at higher temperatures. As a result, a maximum operating temperature of 155 degrees C was achieved, which was 20 degrees C higher than that without the stopper layer.