POTENTIAL AND MODELING OF 1-MU-M SOI CMOS OPERATIONAL TRANSCONDUCTANCE AMPLIFIERS FOR APPLICATIONS UP TO 1 GHZ

The potential of 1-mu m SOI complementary metal-oxide-semiconductor (C MOS) technology for the realization of operational transconductance am plifiers (OTA's) with transition frequencies in the gigahertz range Is demonstrated, High-frequency device models, design guidelines and fre quency limitations are detailed, as well as layout and technology impr ovements which can be used to boost the transconductance at high frequ ency and to reduce the source/drain-to-substrate capacitances, One-sta ge and folded-cascode OTA's have been realized to validate the design methodology.