We propose a static memory architecture in which each bit consists of
a single tmo-terminal device that is bistable in current, Current-mode
operation of the memory array removes the need for cell-isolation tra
nsistors, thus, allowing huge increases in density over inverter-based
SRAM and capacitor-based DRAM. Low pou er consumption and fast read/w
rite speeds are ensured by taking advantage of the exponential nature
of the memory's current-voltage characteristic.