PASSIVATION OF III-IV COMPOUNDS USED FOR METAL-INSULATOR-INP(100) STRUCTURES

Authors
BIDEUX L MERLE S ROBERT C GRUZZA B BENAMARRA Z TIZI S CHELLALI M
Citation
L. Bideux et al., PASSIVATION OF III-IV COMPOUNDS USED FOR METAL-INSULATOR-INP(100) STRUCTURES, Surface and interface analysis, 26(3), 1998, pp. 177-181
Citations number
13
Categorie Soggetti
Chemistry Physical
Journal title
Surface and interface analysis → ACNP
ISSN journal
01422421
Volume
26
Issue
3
Year of publication
1998
Pages
177 - 181
Database
ISI
SICI code
0142-2421(1998)26:3<177:POICUF>2.0.ZU;2-0
Abstract
Alumina was evaporated on InP(100) and InSb/InP(100) substrates, The I nSb buffer layer permits thermal and structural protection of the indi um phosphide substrate, This layer was obtained by condensation of ant imony atoms on the indium-rich InP surface after ionic etching, The ev aporation of antimony leads to Sb-In bonds, Modellization of the Auger signal variations during alumina condensation was compared to the exp erimental results, Auger measurements indicate the improvement of the elaborated structure, This fact has been confirmed by the electrical C (V) characterizations. (C) 1998 John Wiley & Sons, Ltd.